Illumination device

ABSTRACT

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. provisional application No.61/871,843, filed on Aug. 29, 2013, and is a Continuation in Partapplication of U.S. application Ser. No. 13/903, 998, filed on May 28,2013. The entire contents of these related applications are incorporatedherein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor light emitting elementand an illumination device thereof, and more particularly, to asemiconductor light emitting element providing light inmulti-directions, and an illumination device including the semiconductorlight emitting element.

2. Description of the Prior Art

A light beam emitted from a light emitting diode (LED) is a kind ofdirectional light source, which is different from a dispersive lightsource of a conventional bulb. Accordingly, applications of LED arelimited. For instance, the conventional LED cannot or may be hard toprovide required lighting effect for indoor and outdoor illuminationapplications. Additionally, conventional LED illumination devices emitlight beams from a single side and luminous efficiency of theconventional LED illumination device is relatively low accordingly.

SUMMARY OF THE INVENTION

It is one of the objectives of the present invention to provide asemiconductor light emitting element providing light inmulti-directions, an illumination device including the semiconductorlight emitting element, and a device frame of the illumination device.The purposes of luminous efficiency enhancement, light shapeimprovement, and cost reduction may then be achieved.

A preferred embodiment of the present invention provides a semiconductorlight emitting element. The semiconductor light emitting elementincludes a transparent substrate and a plurality of light emitting diode(LED) structures. The transparent substrate has a support surface and asecond main surface disposed opposite to each other. At least some ofthe LED structures are disposed on the support surface and form a firstmain surface where light emitted from with at least a part of thesupport surface without the LED structures. Each of the LED structuresincludes a first electrode and a second electrode. Light emitted from atleast one of the LED structures passes through the transparent substrateand emerges from the second main surface.

A preferred embodiment of the present invention provides an illuminationdevice. The illumination device includes at least one semiconductorlight emitting element and a supporting base. The semiconductor lightemitting element includes a transparent substrate and a plurality of LEDstructures. The transparent substrate has a support surface and a secondmain surface disposed opposite to each other. At least some of the LEDstructures are disposed on the support surface and form a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structures. Each of the LED structures includesa first electrode and a second electrode. Light emitted from at leastone of the LED structures passes through the transparent substrate andemerges from the second main surface. The semiconductor light emittingelement is disposed on the supporting base, and a first angle may existbetween the semiconductor light emitting element and the supportingbase.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate and at least one LED structure.The transparent substrate has a support surface and a second mainsurface disposed opposite to each other. The LED structure is disposedon the support surface and forms a first main surface where lightemitted from with at least a part of the support surface without the LEDstructure. The LED structure includes a first electrode and a secondelectrode. The LED structure has a beam angle greater than 180 degrees,and at least a part of light beams emitted from the LED structure passthrough the transparent substrate and emerge from the second mainsurface.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate and at least one LED structure.A material of the transparent substrate includes sapphire, and thetransparent substrate has a support surface and a second main surfacedisposed opposite to each other. The LED structure is disposed on thesupport surface The LED structure has a beam angle greater than 180degrees. At least a part of light beams emitted from the LED structurepass through the transparent substrate and emerge from the second mainsurface.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate, at least one LED structure anda wavelength conversion layer. The transparent substrate has a supportsurface and a second main surface disposed opposite to each other. TheLED structure is disposed on the support surface and forms a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structure. The LED structure has a beam anglegreater than 180 degrees, and at least apart of light beams emitted fromthe LED structure pass through the transparent substrate and emerge fromthe second main surface. The wavelength conversion layer is at leastdisposed on the LED structure or the second main surface. The wavelengthconversion layer at least partially absorbs a light beam emitted fromthe LED structure and coverts the light beam into another light beamshaving different wavelength range.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate and a plurality of LEDstructures. The transparent substrate has a support surface and a secondmain surface disposed opposite to each other. The LED structures aredisposed on the support surface. A light emitting surface of each LEDstructure uncovered by the transparent substrate and at least a part ofthe support surface without the LED structures form a first main surfacewhere light emitted from. Each of the LED structures has a beam anglegreater than 180 degrees. Light emitted from at least one of the LEDstructures passes through the transparent substrate and emerges from thesecond main surface. An area of the first main surface or an area of thesecond main surface is larger than 5 times of a total area formed fromat least one of the light emitting surfaces of each LED structure.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate, at least one diamond-likecarbon (DLC) film, and at least one LED structure. The transparentsubstrate has a support surface and a second main surface disposedopposite to each other. The DLC film is disposed on the transparentsubstrate. The LED structure is disposed on the support surface. A lightemitting surface of the LED structure uncovered by the transparentsubstrate and at least a part of the support surface without the LEDstructure forma first main surface where light emitted from. The LEDstructure has a beam angle greater than 180 degrees, and at least a partof light beams emitted from the LED structure pass through thetransparent substrate and emerge from the second main surface.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate, at least one LED structure anda reflector. The transparent substrate has a support surface and asecond main surface disposed opposite to each other. The reflector isdisposed on the second main surface. The LED structure is disposed onthe support surface. A light emitting surface of the LED structureuncovered by the transparent substrate and at least a part of thesupport surface without the LED structure form a first main surfacewhere light emitted from. The LED structure has a beam angle greaterthan 180 degree.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate, at least one LED structure, afirst connecting electrode and a second connecting electrode. Thetransparent substrate has a support surface and a second main surfacedisposed opposite to each other. The LED structure is disposed on thesupport surface and forms a first main surface where light emitted fromwith at least a part of the support surface without the LED structure.The LED structure has a beam angle greater than 180 degrees, and atleast a part of light beams emitted from the LED structure pass throughthe transparent substrate and are emitted from the second main surface.The first connecting electrode and the second connecting electrode arerespectively disposed on different sides of the transparent substrate.The first connecting electrode and the second connecting electrode areelectrically connected to the LED structure.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes a semiconductorlight emitting element and a support. The semiconductor light emittingelement includes a transparent substrate, at least one LED structure, afirst connecting electrode and a second connecting electrode. Thetransparent substrate has a support surface and a second main surfacedisposed opposite to each other. The LED structure is disposed on thesupport surface and forms a first main surface where light emitted fromwith at least a part of the support surface without the LED structure.The LED structure has a beam angle greater than 180 degrees, and atleast a part of light beams emitted from the LED structure pass throughthe transparent substrate and are emitted from the second main surface.The first connecting electrode and the second connecting electrode arerespectively disposed on different sides of the transparent substrate.The first connecting electrode and the second connecting electrode areelectrically connected to the LED structure. The support includes atleast one opening, and the semiconductor light emitting element isdisposed correspondingly to the opening.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes a plurality ofsemiconductor light emitting elements and a device frame. Each of thesemiconductor light emitting elements includes a transparent substrate,at least one LED structure, a first connecting electrode and a secondconnecting electrode. The transparent substrate has a support surfaceand a second main surface disposed opposite to each other. The LEDstructure is disposed on the support surface and forms a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structure. The LED structure has a beam anglegreater than 180 degrees, and at least a part of light beams emittedfrom the LED structure pass through the transparent substrate and areemitted from the second main surface. The first connecting electrode andthe second connecting electrode are respectively disposed on differentsides of the transparent substrate. The first connecting electrode andthe second connecting electrode are electrically connected to the LEDstructure. The device frame includes a supporting base and a pluralityof supports extending outward from the supporting base. Each of thesupports includes at least one opening, and the semiconductor lightemitting elements are disposed correspondingly to at least some of theopenings.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes a plurality ofsemiconductor light emitting elements and a light bar. Each of thesemiconductor light emitting elements includes a transparent substrate,at least one LED structure, a first connecting electrode and a secondconnecting electrode. The transparent substrate has a support surfaceand a second main surface disposed opposite to each other. The LEDstructure is disposed on the support surface and forms a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structure. The LED structure has a beam anglegreater than 180 degrees, and at least a part of light beams emittedfrom the LED structure pass through the transparent substrate and areemitted from the second main surface. The first connecting electrode andthe second connecting electrode are respectively disposed on differentsides of the transparent substrate. The first connecting electrode andthe second connecting electrode are electrically connected to the LEDstructure. The light bar includes a plurality of openings. The light barhas an extending direction, and the openings are disposed along theextending direction. The semiconductor light emitting elements aredisposed correspondingly to at least some of the openings.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes a plurality ofsemiconductor light emitting elements and a supporting base. Each of thesemiconductor light emitting elements includes a transparent substrate,at least one LED structure, a first connecting electrode and a secondconnecting electrode. The transparent substrate has a support surfaceand a second main surface disposed opposite to each other. The LEDstructure is disposed on the support surface and forms a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structure. The LED structure has a beam anglegreater than 180 degrees, and at least a part of light beams emittedfrom the LED structure pass through the transparent substrate and areemitted from the second main surface. The first connecting electrode andthe second connecting electrode are respectively disposed on differentsides of the transparent substrate. The first connecting electrode andthe second connecting electrode are electrically connected to the LEDstructure. The supporting base includes a plurality of openings. Theopenings are disposed as an array. The semiconductor light emittingelements are disposed correspondingly to at least some of the openings.

Another preferred embodiment of the present invention provides a deviceframe of an illumination device. The device frame includes a supportingbase and a plurality of supports. Each of the supports extends from thesupporting base. Each of the supports includes at least one opening anda plurality of electrodes disposed on two sides of the opening.

In the illumination device of the present invention, the LED structureis fixed on the transparent substrate, and the transparent substrateallows the light beam emitted by the LED structure passing through.Accordingly, the illumination device in the present invention can emitlight in at least multi-directions or all directions. The luminousefficiency of the illumination device may be accordingly enhanced, andthe light shape of the LED illumination device may also be improved.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The patent or application file contains at least one drawing executed incolor. Copies of this patent or patent application publication withcolor drawing (s) will be provided by the Office upon request andpayment of the necessary fee.

FIG. 1 and FIG. 2 are schematic structure diagrams illustrating asemiconductor light emitting element according to a preferred embodimentof the present invention.

FIGS. 3-5 are schematic diagrams illustrating different types ofelectrically coupling approaches between a light emitting diodestructure and conductors according to a preferred embodiment of thepresent invention.

FIG. 6 and FIG. 7 are schematic diagrams illustrating a disposition of awavelength conversion layer according to a preferred embodiment of thepresent invention.

FIG. 8 is a cross-sectional diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 9 is a cross-sectional diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 10 is a schematic diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 11 is a schematic diagram illustrating a supporting base accordingto a preferred embodiment of the present invention.

FIG. 12 is a schematic diagram illustrating a circuit board according toa preferred embodiment of the present invention.

FIG. 13 is a schematic diagram illustrating a reflector according to apreferred embodiment of the present invention.

FIG. 14 is a schematic diagram illustrating a diamond-like carbon filmaccording to a preferred embodiment of the present invention.

FIG. 15 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 16 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 17 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIGS. 18-20 are schematic diagrams illustrating a transparent substrateinserted or bonded to a supporting base according to a preferredembodiment of the present invention.

FIG. 21 and FIG. 22 are schematic diagrams illustrating a transparentsubstrate bonded to a supporting base with supports according to apreferred embodiment of the present invention.

FIG. 23 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 24 is a schematic diagram illustrating a device frame of anillumination device according to another preferred embodiment of thepresent invention.

FIG. 25 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIGS. 26-29 are schematic diagrams illustrating transparent substratespoint-symmetrically or line-symmetrically disposed on a supportingstructure according to a preferred embodiment of the present invention.

FIG. 30 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 31 and FIG. 32 are schematic diagrams illustrating a lamp housingaccording to a preferred embodiment of the present invention.

FIG. 33 is a schematic diagram of the illumination device according tothe first embodiment of the present invention.

FIG. 34 is an illumination map of the illumination device shown in FIG.33.

FIG. 35 is a partial schematic diagram of the illumination deviceaccording to the second embodiment of the present invention.

FIG. 36 is a lateral view of the illumination device according to thesecond embodiment of the present invention.

FIG. 37 is an illumination map of the illumination device shown in FIG.35 and FIG. 36.

FIGS. 38-39 respectively are partial schematic diagrams of differentkinds of illumination device according to the embodiments of the presentinvention.

FIG. 40 is an illumination map of the illumination device according toone of preferable embodiments of the present invention.

DETAILED DESCRIPTION

Please refer to FIG. 1 and FIG. 2. FIG. 1 and FIG. 2 are schematicstructure diagrams illustrating a semiconductor light emitting elementaccording to a preferred embodiment of the present invention. As shownin FIG. 1 and FIG. 2, a semiconductor light emitting element 1 includesa transparent substrate 2, a support surface 210, a first main surface21A, a second main surface 21B and at least one light emitting diode(LED) structure 3 providing light in multi-directions. The transparentsubstrate 2, which is a sheet type substrate, has two main surfaces, andone of the surfaces is the support surface 210. The LED structure 3capable of emitting light is disposed on the support surface 210. Alight emitting surface 34 of the LED structure 3 uncovered by thetransparent substrate 2 and at least a part of the support surface 210without the LED structure form the first main surface 21A where lightemitted from. The second main surface 21B is another main surface of thetransparent substrate 2 without the LED structures 3. The dispositiondescribed above may also be reversed, or the LED structure 3 may bedisposed on the two surfaces of the transparent substrate 2. In oneembodiment, LED structures 3 may be disposed on the support surface 210of the transparent substrate 2 interlacedly corresponding to other LEDstructures 3 disposed on the second main surface 21B, such that lightbeams emitted from LED structures 3 on one surface of the transparentsubstrate 2 would not be blocked by other LED structures 3 on anothersurface of the transparent substrate 2. The luminance of thesemiconductor light emitting element 1 may be increased accordingly. Amaterial of the transparent substrate 2 may comprise one selected fromaluminum oxide (Al2O3), sapphire containing aluminum oxide, siliconcarbide (SiC), glass, plastic or rubber. Preferably, the transparentsubstrate may be a sapphire substrate in a preferred embodiment of thepresent invention. The structure of the sapphire substrate issubstantially single crystal. The sapphire substrate has properties ofhigher light transmittance and better heat dissipation capability. Thesapphire substrate may be used to increase the life time of thesemiconductor light emitting element 1. However, the conventionalsapphire substrate used for growing a conventional light emitting diodemay be fragile when applied in the present invention. According toexperiment results of the present invention, the transparent substrate 2of the present invention is preferably a sapphire substrate having athickness thicker than or equal to 200 micrometers so as to performbetter reliability, supporting performance and transparency. Foreffectively emitting light in multi-directions, includingdual-directions or full directions, from the semiconductor lightemitting element 1, the LED structure 3 in this invention preferably hasa beam angle greater than 180 degrees. Accordingly, the LED structure 3disposed on the transparent substrate 2 may emit light beams from thelight emitting surface 34 toward a direction away from the transparentsubstrate 2, and the LED structure 3 may also emit light beams at leastpartially entering the transparent substrate 2. The light beams enteringthe transparent substrate 2 may emerge from the second main surface 21Bopposite to the first main surface 21A, and the light beams entering thetransparent substrate 2 may also be emitted from a part of the supportsurface 210 without LED structures 3 or emitted from other surface ofthe transparent substrate 2. The semiconductor light emitting element 1may then be capable of emitting light in multi-directions includingdual-directions or full directions. In this invention, an area of thefirst main surface 21A or an area of the second main surface 21B islarger than 5 times of a total area formed from at least one of thelight emitting surfaces 34 of each LED structure, and this is apreferred proportion according to the consideration of both the luminousefficiency and the heat dissipation performance.

Additionally, in another preferred embodiment of the present invention,a difference in color temperatures of light beams emitted from the firstmain surface 21A and the second main surface 21B is smaller than orequal to 1500K so as to uniform light emitting effects of thesemiconductor light emitting element 1. In addition, under the thicknesscondition of the transparent substrate 2 mentioned above, a lighttransmittance of the transparent substrate 3 is larger than or equal to70% for light beams having a wavelength range larger than or equal to420 nanometers, or light beams having a wavelength rage smaller than orequal to 470 nanometers.

The present invention is not limited to the embodiment described above.The following description will detail the different embodiments in thepresent invention. To simplify the description, similar components ineach of the following embodiments are marked with identical symbols. Formaking it easier to understand the differences between the embodiments,the following description will detail the dissimilarities amongdifferent embodiments and the identical features will not be redundantlydescribed.

Please refer to FIGS. 3-5. In the present invention, the LED structure 3includes a first electrode 31A and a second electrode 31B for receivingelectricity. The first electrode 31A and the second electrode 31B arerespectively and electrically connected to a first connecting conductor23A and a second connecting conductor 23B on the transparent substrate2. FIGS. 3-5 are schematic diagrams illustrating different types ofelectrically coupling approaches between the light emitting diodestructure 3 and the conductors. FIG. 3 illustrates a horizontal type LEDstructure, the LED structure 3 is formed on the support surface 210 ofthe transparent substrate 2, and the electrodes 31A and 31B are coupledto the connecting conductors 23A and 23B by wire bonding. FIG. 4illustrates a flip chip type LED structure 3, and the LED structure 3 isdisposed reversely and electrically coupled to the transparent substrate2 by the first electrode 31A and the second electrode 31B. The firstelectrode 31A and the second electrode 31B may be directly coupled tothe first connecting conductor 23A and the second connecting conductor23B by welding or adhering. As shown in FIG. 5, the first electrode 31Aand the second electrode 31B are disposed on different surfaces of theLED structure 3, and the LED structure 3 is vertically disposed so as torespectively connect the electrodes 31A and 31B to the connectingconductors 23A and 23B.

Please refer to FIG. 6 and FIG. 7. The semiconductor light emittingelement 1 in the present invention may further include a wavelengthconversion layer 4. The wavelength conversion layer 4 may be selectivelydisposed on the first main surface 21A or/and the second main surface21B, or directly on the LED structures 3. The wavelength conversionlayer 4 may directly contact the LED structures 3, or the wavelengthconversion layer 4 may be separated from the LED structures 3 by adistance without directly contact. The wavelength conversion layer 4contains at least one kind of fluorescent powders such as organicfluorescent powder or inorganic fluorescent powder of garnet series,sulfate series or silicate series. The wavelength conversion layer 4 maythen be able to at least partially absorb a light beam emitted from theLED structure 3 and covert the light beam into another light beamshaving different wavelength range. For example, when blue light beamsare emitted from the LED structure 3, a part of the blue light beams maybe converted into yellow light beams by the wavelength conversion layer4, and the blue light beams and the yellow light beams may be mixed forpresenting white light beams emitted from the semiconductor lightemitting element 1. Additionally, a luminance of the first main surface21A is different from a luminance of the second main surface 21B becausea light source of the first main surface 21A mainly comes from lightbeams directly emitted from the LED structure 3, and a light source ofthe second main surface 21B comes from light beams passing through thetransparent substrate 2. Therefore, in a semiconductor light emittingelement 1 of another preferred embodiment, concentrations of thefluorescent powders in the wavelength conversion layer 4 disposed on thefirst main surface 21A and the wavelength conversion layer 4 disposed onthe second main surface 21B are arranged correspondingly. Preferably, aratio of a fluorescent powder concentration in the wavelength conversionlayer 4 disposed on the first main surface 21A to a fluorescent powderconcentration in the wavelength conversion layer 4 disposed on thesecond main surface 21B may ranges from 1:0.5 to 1:3, or a ratio of thefluorescent powder concentration in the wavelength conversion layer 4disposed on the second main surface 21B to the fluorescent powders inthe wavelength conversion layer 4 disposed on the first main surface 21Amay ranges from 1:0.5 to 1:3. The luminance and the lighting effect ofthe semiconductor light emitting element 1 may become more appropriatefor different applications accordingly. A difference in colortemperatures of light beams emitted from the first main surface 21A andthe second main surface 21B may then be controlled to be smaller than orequal to 1500K. A wavelength converting efficiency and light emittingperformance of the semiconductor light emitting element 1 may then beenhanced.

Please refer to FIG. 8. FIG. 8 is a cross-sectional diagram illustratinga semiconductor light emitting element 1 according to another preferredembodiment of the present invention. As shown in FIG. 8, thesemiconductor light emitting element 1 in this embodiment includes atransparent substrate 2 and at least one LED structure 14 providinglight in multi-directions. The transparent substrate 2 has a supportsurface 210 and a second main surface 21B disposed opposite to eachother. The LED structure 14 is disposed on the support surface 210 ofthe transparent substrate 2. The LED structure 14 includes a firstelectrode 16 and a second electrode 18. The first electrode 16 and thesecond electrode 18 are configured to be electrically connected to otherdevices. A light emitting surface 34 of the LED structure 14 uncoveredby the transparent substrate 2 and at least a part of the supportsurface 210 without the LED structure 14 form a first main surface 21Awhere light emitted from.

The LED structure 14 may include a substrate 141, an N-typedsemiconductor layer 142, an active layer 143 and a P-typed semiconductorlayer 144. In this embodiment, the substrate 141 of the LED structure 14may be attached on the transparent substrate 2 by such as a chip bondinglayer 28. Apart from being used to attach the LED structure 14, a lightintensity may also be increased by optimizing the material property ofthe chip bonding layer 28. For example, a refractive index of the chipbonding layer 28 is preferably between a refractive index of thesubstrate 141 and a refractive index of the transparent substrate 2 soas to increase the intensity of light emitted from the LED structure 14.In addition, the chip bonding layer 28 may be a transparent adhesive orother appropriate bonding material. The first electrode 16 and thesecond electrode 18 are disposed on the side of the LED structure 14opposite to the chip bonding layer 28. The first electrode 16 and thesecond electrode 18 are electrically connected to the P-typedsemiconductor layer 144 and the N-typed semiconductor layer 142respectively (FIG. 8 does not show the connecting relation between thesecond electrode 18 and the N-typed semiconductor layer 142). Horizontallevel of an upper surface of the first electrode 16 and an upper surfaceof the second electrode 18 are substantially the same. The firstelectrode 16 and the second electrode 18 may be metal electrodes, butnot limited thereto. In addition, the semiconductor light emittingelement 1 further includes a first connecting conductor 20, a secondconnecting conductor 22 and a wavelength conversion layer 4. The firstconnecting conductor 20 and the second connecting conductor 22 aredisposed on the transparent substrate 2. The first connecting conductor20 and the second connecting conductor 22 may be metal wires or otherconductive patterns, but not limited thereto. The first electrode 16 andthe second electrode 18 are respectively connected to the firstconnecting conductor 20 and the second connecting conductor 22electrically by wire bonding or welding, but not limited thereto. Thewavelength conversion layer 4 is disposed on the transparent substrate2, and the wavelength conversion layer 4 may cover the LED structure 14.Additionally, the wavelength conversion layer 4 may further cover thesecond main surface 21B of the transparent substrate 2.

In addition, a non-planar structure 12M may be selectively disposed onthe surfaces of the transparent substrate 2 for increasing the intensityof light emitted from the transparent substrate 2 and unifying thedistribution of the emitted light. The non-planar structure 12M may be aconvex geometric structure or a concave geometric structure, such as apyramid, a cone, a hemispheroid, a triangular prism and so forth. Thenon-planar structures 12M may be arranged regularly or randomly.Furthermore, a diamond-like carbon (DLC) film 25 may be selectivelydisposed on the surfaces of the transparent substrate 2 so as to enhancethe thermal conductive ability and the heat dissipating performance.

Please refer to FIG. 9. FIG. 9 is a cross-sectional diagram illustratinga semiconductor light emitting element according to another preferredembodiment of the present invention. Compared with the embodiment shownin FIG. 8, in the semiconductor light emitting element 1 of thisembodiment, the first electrode 16, the second electrode 18 and a firstchip bonding layer 28A are disposed on the same surface of the LEDstructure 14. That the first electrode 16 and the second electrode 18are electrically connected to the first connecting conductor 20 and thesecond connecting conductor 22 by flip chip. Wherein the firstconnecting conductor 20 and the second connecting conductor 22 mayrespectively extend corresponding to the positions of the firstelectrode 16 and 18. And the first electrode 16 and the second electrode18 may be respectively connected to the first connecting conductor 20and the second connecting conductor 22 electrically through a secondchip bonding layer 28B. The second chip bonding layer 28B may be aconductive bump such as a gold bump or a solder bump, a conductive gluesuch as a silver glue, or an eutectic layer such as an Au—Sn alloyeutectic layer or an In—Bi—Sn alloy eutectic layer, but not limited tothis. By employing the second chip bonding layer 28B, the first chipbonding layer 28A under the LED structure 14 may not be required or maybe replaced by the wavelength conversion layer 4.

Please refer to FIG. 10. FIG. 10 is a schematic diagram illustrating asemiconductor light emitting element according to another preferredembodiment of the present invention. As shown in FIG. 10, asemiconductor light emitting element 310 in this invention includes thetransparent substrate 2, at least one LED structure 3, a firstconnecting electrode 311A, a second connecting electrode 311B and atleast one wavelength conversion layer 4. The LED structure 3 is disposedon the support surface 210 of the transparent substrate 2 and forms afirst main surface 21A where light emitted from. In this embodiment, theLED structure 3 has a beam angle greater than 180 degrees, and at leasta part of light beams emitted from the LED structure 3 penetrate intothe transparent substrate 2. At least a part of the penetrating lightbeams may be emitted from a second main surface 21B which is opposite tothe first main surface 21A, and the other penetrating light beams may beemitted from other surfaces of the transparent substrate 2, so as toform the semiconductor light emitting element 310 providing light inmulti-directions. The first connecting electrode 311A and the secondconnecting electrode 311B are respectively disposed on different sidesof the transparent substrate 2 or on the same side of the transparentsubstrate 2 (not shown in FIG. 10). The first connecting electrode 311Aand the second connecting electrode 311B may be electrodes of thesemiconductor light emitting element 310 respectively formed byextension parts of a first connecting conductor and a second connectingconductor on the transparent substrate 2, and the first connectingelectrode 311A and the second connecting electrode 311B are electricallyconnected to the LED structure 3 accordingly. The wavelength conversionlayer 4 at least covers the LED structure 3 and exposes at least a partof the first connecting electrode 311A and the second connectingelectrode 311B. The wavelength conversion layer 4 at least partiallyabsorbs a light beam emitted from the LED structure 3 or/and thetransparent substrate 2, and coverts the light beam into alight beamhaving another wavelength range. The converted light and the light whichare not absorbed by the wavelength conversion layer 4 are mixed toextend the total wavelength range of the light beams emitted from thesemiconductor light emitting element 310 and improve the light emittingperformance of the semiconductor light emitting element 310. Because thesemiconductor light emitting element 310 in this embodiment includes thefirst connecting electrode 311A and the second connecting electrode 311Brespectively disposed on the transparent substrate 2, traditional LEDpackaging process may be omitted and the semiconductor light emittingelement 310 may be independently manufactured and then combined with anappropriate supporting base. Accordingly, the total manufacturing yieldmay be improved, the structure may be simplified and applications of thecorresponding supporting base may also be increased.

Please refer to FIG. 11. An illumination device 11 is provided in thisembodiment. The illumination device 11 includes a supporting base 5 andthe semiconductor light emitting element described above. Thetransparent substrate 2 of the semiconductor light emitting element maystand on (or lie on) and be electrically coupled to the supporting base5. A first angle θ1 exists between the transparent substrate 2 and thesupporting base 5. The first angle θ1 may be fixed or be adjustedaccording to the light shape requirement of the illumination device.Preferably, the first angle θ1 ranges from 30 degrees to 150 degrees.

Please refer to FIG. 12. The supporting base 5 of the illuminationdevice 11 in the present invention may further include a circuit board 6electrically coupled to a power supply. The circuit board 6 iselectrically coupled to a first connecting conductor and a secondconnecting conductor (not shown in FIG. 12) so as to be electricallyconnected to the LED structure 3. The power supply may then provideelectricity to the LED ship 3 for emitting light via the circuit board6. In other preferred embodiment of the present invention, the LEDstructure 3 may also be electrically connected to the supporting basedirectly via the first connecting conductor and the second connectingconductor (not shown in FIG. 12) without the circuit board 6, and thepower supply may provide electricity to the LED ship 3 via thesupporting base 5.

Please refer to FIG. 13. The illumination device 11 of the presentinvention may further include a reflector or filter 8 disposed on thesecond main surface 21B or the support surface 210. The reflector orfilter 8 may be used to reflect at least a part of light beams emittedfrom the LED structure 3 and passing through the transparent substrate2. At least apart of the reflected light beams may be changed to beemitted from the first main surface 21A. The reflector 8 may include atleast one metal layer or a Bragg reflector, but not limited thereto. TheBragg reflector may be composed of a plurality of insulating thin filmswith different refractive indexes disposed in a stack configuration, orthe Bragg reflector may be composed of a plurality of insulating thinfilms with different refractive indexes and a plurality of metal oxidelayers disposed in a stack configuration.

Please refer to FIG. 14. The illumination device 11 of the presentinvention may further include a diamond-like carbon (DLC) film 9disposed on the support surface 210 or/and the second main surface 21Bof the transparent substrate 2 so as to enhance the thermal conductiveability and the heat dissipating performance.

Please refer to FIG. 15. FIG. 15 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. As shown in FIG. 15, an illumination device 10 inthis embodiment includes a supporting base 26 and the semiconductorlight emitting element described in the present invention. Thesemiconductor light emitting element includes a transparent substrate 2and at least one LED structure 14. The semiconductor light emittingelement may be at least partially embedded into the supporting base 26.An electrode 30 and an electrode 32 of the supporting base 26 areelectrically connected to the connecting conductors of the semiconductorlight emitting element. Driving voltage V+ and V− may be accordinglyprovided through the electrodes 30 and 32 respectively to the LEDstructure 14 for emitting the light beam L. The LED structure 14includes a first electrode 16 and a second electrode 18 respectively andelectrically connected to the first connecting conductor 20 and thesecond connecting conductor 22 by wire bonding, but not limited thereto.Additionally, the LED structure 14 has a beam angle greater than 180degrees or has a plurality of light emitting surfaces, and then theillumination device 10 may emit light beams from the first main surface21A and the second main surface 21B. Furthermore, because some of thelight beams may be emitted directly from the LED structure 14 and/or theother four side surfaces of the transparent substrate 2, theillumination device 10 may accordingly emit light from multi sides orsix sides or in full directions.

The semiconductor light emitting element may further include awavelength conversion layer 4 selectively disposed on the LED structure14, the first main surface 21A or the second main surface 21B. Thewavelength conversion layer 4 may at least partially absorb a light beamemitted from the LED structure 14 and covert the light beam into anotherlight beam having different wavelength range so as to emit light withspecific color or light having a wider wavelength range from theillumination device 10. For example, when blue light beams are emittedfrom the LED structure 14, a part of the blue light beams may beconverted into yellow light beams by the wavelength conversion layer 4,and the blue light beams and the yellow light beams may be mixed forpresenting white light beams emitted from the illumination device 10.Additionally, the transparent substrate 2 may be directly or indirectlyfixed on the supporting base 26 in a parallel state or a non-parallelstate. For instance, the transparent substrate 2 may be vertically fixedon the supporting base 26 by mounting a side wall of the transparentsubstrate 2 with the supporting base 26 directly, or the transparentsubstrate 2 may be horizontally disposed on the supporting base 26, butnot limited thereto. The transparent substrate 2 preferably includesmaterials with high thermal conductivity, and heat generated from theLED structure 14 may be accordingly dissipated to the supporting base 26through the transparent substrate 2, such that the high power LEDstructures can be applied in the illumination device of the presentinvention accordingly. However, in a preferred embodiment of the presentinvention, at the same power consumption of the illumination device,more LED structures with relatively low power are dispersed on thetransparent substrate 2 so as to fully utilize the thermal conductivitycapability of the transparent substrate 2. For example, a power of theLED structure in this embodiment may be equal to or lower than 0.2 watt,but not limited thereto.

Please refer to FIG. 16. FIG. 16 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. Compared with the illumination shown in FIG. 15, anillumination device 10′ in this embodiment includes a plurality of LEDstructures 14, and at least some of the LED structures 14 areelectrically connected to each other in series. Each of the LEDstructures 14 includes the first electrode 16 and the second electrode18. The first electrode 16 of one LED structure 14 disposed on one endof the series is electrically connected to the first connectingconductor 20, and the second electrode 18 of another LED structure 14disposed on another end of the series is electrically connected to thesecond connecting conductor 22, but not limited thereto. The LEDstructures 14 may be electrically connected in series or in parallel.The LED structures 14 may be LED structures emitting identical color,such as blue LED structures, or LED structures emitting different colorsmay also be applied and combined according to different demands. Theillumination device 10′ may emit light in much more different colors byfurther employing the wavelength conversion layer 4 according to thepresent invention.

Please refer to FIG. 17. FIG. 17 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. Compared with the illumination devices shown in FIG.15 and FIG. 16, an illumination device 50 in this embodiment furtherincludes a support 51 configured to connect the semiconductor lightemitting element and the supporting base 26. The transparent substrate 2of the semiconductor light emitting element is fixed on a side of thesupport 51 by a unit bonding layer 52, and another side of the support51 may be disposed on or inserted into the supporting base 26.Additionally, the support 51 is flexible so as to form an angle betweenthe transparent substrate 2 and the supporting base 26, and the angleranges from 30 degrees to 150 degrees. A material of the support 51 mayinclude one selected from aluminum, composite metallic material, copperconductor, electric wire, ceramic substrate, printed circuit board, orother appropriate materials.

Please refer to FIGS. 18-20. When the transparent substrate 2 in thepresent invention is disposed on a supporting base 5, the transparentsubstrate 2 may be inserted or bonded to the supporting base 5.

As shown in FIG. 18. When the transparent substrate 2 is disposed on thesupporting base 5, the transparent substrate 2 is inserted in to asingle socket 61 of the supporting base 5, and the semiconductor lightemitting element may be electrically coupled to the single socket 61 viaconnecting conductors. The LED structures (not shown in FIG. 18) on thetransparent substrate 2 have to be electrically coupled to a powersupply from or through the supporting base 5, and at least part of theconductive pattern or the connecting conductors are extended to an edgeof the transparent substrate 2 and integrated in to an connecting fingerhaving a plurality of conductive contact sheets or an electricallyconnecting port such as the connecting electrodes 311A and 311Bdescribed above (not shown in FIG. 18). When the transparent substrate 2is inserted into the socket 61, the LED structure (not shown in FIG. 18)may then receive electricity from or through the supporting base 5, andthe transparent substrate 2 may be fixed by the socket 61 of thesupporting base 5 accordingly.

Please refer to FIG. 19. FIG. 19 is a schematic diagram illustrating thetransparent substrate 2 inserted into a multi sockets of the supportingbase 5. In this embodiment, the transparent substrate 2 has a dual-pinstructure. One of the pins may be configured as a positive electrode ofthe device, and another one of the pins may be configured as a negativeelectrode of the device. Both of the pins have at least one conductivecontact sheet respectively so as to act as connecting ports.Accordingly, there are at least two sockets 61 having correspondingshape and size with the pins so as to smoothly insert the transparentsubstrate 2 into the supporting base 5 and provide electricity to theLED structure.

Please refer to FIG. 20. The transparent substrate 2 is bonded to thesupporting base 5 by the device bonding layer. In the bonding process,metal materials such as gold, tin, indium, bismuth or silver may be usedin combining or welding the transparent substrate 2 and the supportingbase 5. Additionally, conductive silica gel or epoxy material may alsobe used in fixing the transparent substrate 2 on the supporting base 5.The conductive pattern and the connecting conductors of thesemiconductor light emitting element may be electrically connected tothe supporting base via the device bonding layer accordingly.

Please refer to FIG. 21 and FIG. 22. The supporting base 5 of theillumination device 11 described in the present invention may be asubstrate comprising one selected from metal such as aluminum, compositemetallic material including aluminum, copper conductor, electric wire,ceramic substrate or printed circuit board. There is at least onesupport 62 on a surface or edge of the supporting base 5. The support 62may be separated from the supporting base 5, or the support 62 and thesupporting base 5 are monolithically integrated. The semiconductor lightemitting element may be electrically coupled to the support 62 bybonding, and a device bonding layer 63 is used to fix the transparentsubstrate 2 on the supporting base 5. The first angle θ1 is maintainedbetween the transparent substrate 2 and a surface of the supporting base5 without supports. The semiconductor light emitting elements may alsobe disposed on the surface of the supporting base 5 without supports soas to enhance the light emitting performance of the illumination device11. Additionally, the semiconductor light emitting element may also beinserted and connected to the support 62 (not shown in FIG. 21 and FIG.22), wherein a connector may be used to connect the semiconductor lightemitting element and the support (and/or the support and the supportingbase) so as to fix the transparent substrate 2 on the supporting base 5.Because the supporting base 5 and the support 62 are flexible, it ismore convenient to apply the present invention to differentapplications. Moreover, the color variety of the illumination device 11may be enhanced for different demands by combining using thesemiconductor light emitting elements having different light color.

Please refer to FIG. 23. As shown in FIG. 23, an illumination device inthis embodiment includes at least one semiconductor light emittingelement 1 and a supporting base 5. The supporting base 5 includes atleast one support 62 and at least one circuit pattern P. An end of thetransparent substrate of the semiconductor light emitting element 1 iselectrically coupled to the support 62 so as to avoid or reduce theshielding influence caused by the support 62 for light emitting from thesemiconductor light emitting element 1. The supporting base 5 may beselected from metal such as aluminum, composite metallic materialincluding aluminum, copper conductor, electric wire, ceramic substrateor printed circuit board. The support 62 may be formed by cutting andbending a part of the supporting base 5 to form an angle (as the firstangle θ1 shown in FIG. 21 and FIG. 22). The circuit pattern P isdisposed on supporting base 5, and the circuit pattern P has at leastone set of electrical port to be electrically connected to a powersupply. Another part of the circuit pattern P extends on the support 62so as to be electrically connected to the semiconductor light emittingelement 1, and the semiconductor light emitting element 1 may than beelectrically connected to the power supply via the circuit pattern P ofthe supporting base 5. In addition, the supporting base 5 may furtherinclude at least one hole H or at least one gap G, and fixing devicessuch as screws, nails or bolts may be used to combine the supportingbase 5 with other device via the hole H or the gap G according to theapplication conditions of the illumination device. Meanwhile, the hole Hor the gap G may also be used to increase the heat radiating area andenhance the heat dissipation capability of the illumination device.

Please refer to FIG. 24. FIG. 24 is a schematic diagram illustrating adevice frame of an illumination device according to another preferredembodiment of the present invention. As shown in FIG. 24, a device frame322 in this embodiment includes a supporting base 5 and at least onesupport 62. Compared with the embodiment shown in FIG. 23, the support62 in this embodiment includes at least one stripe part 342 and anopening 330. The electrode 30 and the electrode 32 are respectivelydisposed on two sides of the opening 330. The stripe part 342 forms atleast one wall of the opening 330. One semiconductor light emittingelement described in the present invention is disposed correspondinglyto the opening 330 and electrically coupled to the support 62. Theconnecting conductors of the semiconductor light emitting element iselectrically connected to the electrode 30 and the electrode 32 so as todrive the semiconductor light emitting element by a power supply via thesupport 62 and the circuit pattern on the supporting base 5. A size ofthe opening 330 may not be smaller than a main light emitting surface ofthe semiconductor light emitting element so as to prevent light beamsemitted from the semiconductor light emitting element from being blockedby the support 62. A connection part between the support 62 and thesupporting base 5 may be adjustable so as to adjust the angle betweenthe support 62 and the supporting base 5 as required.

Please refer to FIG. 24 and FIG. 25. FIG. 25 is a schematic diagramillustrating an illumination device according to another preferredembodiment of the present invention. Compared with the embodiment shownin FIG. 24, an illumination device 302 shown in FIG. 25 further includesat least one support 62 having a plurality of openings 330. The openings330 are respectively disposed on two opposite sides of the support 62,and the stripe part 342 forms at least one wall of each opening 330. Thesemiconductor light emitting element 310 are disposed correspondingly tothe openings 330, and the conductive pattern or the connectingelectrodes (not shown in FIG. 25) of each semiconductor light emittingelement 310 are respectively disposed correspondingly and electricallyconnected to the electrode 30 and 32. The illumination device 302 inthis embodiment may further include a plurality of the supports 62. Thesupport 62 is disposed between the semiconductor light emitting element1 and the supporting base 5. A length of the support 62 maysubstantially range from 5.8 to 20 um. Angles between the supportingbase 5 and the supports 62 with the semiconductor light emitting elementdisposed on may be modified respectively. In other words, an anglebetween the supporting base 5 and at least one of the supports 62 may bedifferent from an angle between the supporting base 5 and another one ofthe supports 62 so as to perform required light emitting effects, butnot limited thereto. Additionally, semiconductor light emitting elementsemitting light having different wavelength ranges may be disposed on anidentical support or on different supports so as to enrich the coloreffect of the illumination device.

For enhancing the luminance and improving the light emitting effect, inan illumination device of another preferred embodiment of the presentinvention, a plurality of the semiconductor light emitting elementscomprising the transparent substrates are disposed on the supportingbases detailed above or on other supporting structures. Apoint-symmetric distribution or a line-symmetric distribution may beapplied. The semiconductor light emitting elements comprising thetransparent substrates may be point-symmetrically disposed on thesupporting structure or line-symmetrically disposed on the supportingstructure. Please refer to FIGS. 26-29. In the illumination devices ofthe embodiments shown in FIGS. 26-29, the semiconductor light emittingelements are disposed on the supporting structures having differentshapes. The light beams emitted from the illumination devices 11 may beuniform because of the point-symmetric distribution or theline-symmetric distribution (the LED structures are not shown in FIGS.26-29). The light emitting effects of the illumination devices 11 may befurther improved by adjusting the first angle described above. As shownin FIG. 26, the semiconductor light emitting elements arepoint-symmetrically arranged and form an angle between each other in 90degrees. Therefore, at least two of the semiconductor light emittingelements may face any one of the four sides of the illumination device11. As shown in FIG. 27, the angle between the semiconductor lightemitting elements is smaller than 90 degrees. As shown in FIG. 29, theangle between the semiconductor light emitting elements is larger than90 degrees. In another preferred embodiment of the present invention(not shown), the semiconductor light emitting elements may beasymmetrically disposed and at least apart of the semiconductor lightemitting elements may be disposed in a crowd or separately disposed soas to perform required light shape according to different applicationsof the illumination device.

Please refer to FIG. 30. FIG. 30 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. As shown in FIG. 30, an illumination device 301includes a semiconductor light emitting element 310 and a support 321.The support 321 includes an opening 330, and the semiconductor lightemitting element 310 is disposed correspondingly to the opening 330. Inthis embodiment, an external part of the support 321 may be work as apin or be bent to form a connecting pad required in surface mounting soas to be fixed and electrically connected to other electrical circuitunits. A light emitting surface of the semiconductor light emittingelement 310 is disposed in the opening 330, and the illumination device301 may still emit light from multi sides or six sides accordinglywhether the support 321 is transparent or not.

Please refer to FIG. 31. An illumination device is provided in thisembodiment of the present invention. The illumination device includes alamp housing 7 having a tube shape, at least one semiconductor lightemitting element 1 and a supporting structure 60. The semiconductorlight emitting element 1 is disposed on the supporting structure 60, andat least a part of the semiconductor light emitting element 1 isdisposed in space formed by the lamp housing 7. Please refer to FIG. 32.When more semiconductor light emitting elements 1 are disposed in thelamp housing 7, the first main surfaces 21A of the semiconductor lightemitting elements 1 are arranged separately and not parallel to oneanother. Additionally, the semiconductor light emitting elements 1 areat least partially disposed in space formed by the lamp housing 7, andthe semiconductor light emitting elements 1 are not closely adjacent toan inner wall of the lamp housing 7. Preferably, a distance D betweenthe semiconductor light emitting element 1 and the lamp housing 7 may beequal to or larger than 500 micrometers. However, the lamp housing 7 mayalso be formed by filling glue, and the lamp housing 7 may at leastpartially cover and directly contact the semiconductor light emittingelement 1.

Please refer to FIG. 33 and FIG. 23. FIG. 33 is a schematic diagram ofan illumination device 11 according to another embodiment of the presentinvention. One of the differences between the embodiments shown in FIG.33 and FIG. 23 is the number of semiconductor light emitting elements 1,which is three in FIG. 33, and these light emitting elements 1 aredisposed around a symmetrical center of a supporting base 5, whereineach of the light emitting elements 1 may comprise at least a majorlight emitting surface facing the symmetrical center of the supportingbase 5. In some embodiments of the present invention, the number ofsemiconductor light emitting element 1 which comprising at least a majorlight emitting surface facing the symmetrical center of the supportingbase 5 may be at least two. At least a first angle θ1 may exist betweenthe corresponding semiconductor light emitting element 1 and thesupporting base 5, wherein the range of the first angle θ1 issubstantially from 30 degrees to 150 degrees. The illumination device 11according to the embodiment further comprises a candle like housing 7entirely covering the semiconductor light emitting elements 1, supports62, and the supporting base 5. Because the light of the illuminationdevice 1 may not be uniform when the first angle θ1 is equal to or closeto 90 degrees, there is another embodiment that the first angle θ1 ispreferably equal to or close to 60 degrees or 80 degrees, which may bevaried according to length difference between the semiconductor lightemitting element 1 and the housing 7, and an illumination map of theillumination device 11 according to this embodiment may refer to FIG.34.

Because the light of the illumination device 1 according to the aboveembodiment as shown in FIGS. 33 and 34 may be not uniform enough, thereare further improved embodiments according to the invention. Pleaserefer to FIG. 35 and FIG. 36. FIG. 35 is a partial schematic diagram ofan illumination device 11 according to another embodiment of the presentinvention, and FIG. 36 is a lateral view of the illumination device 11correspondingly. The illumination 11 according to this embodiment maycomprise at least two supports 62 bent relative to a supporting base 5and not oriented toward a symmetrical center 5 a of the supporting base5, and at least two semiconductor light emitting elements 1 respectivelydisposed on the corresponding supports 62 and around the symmetricalcenter 5 a, wherein the major light emitting surface of the lightemitting elements 1 may not face the symmetrical center 5 a of thesupporting base 5. The supporting base 5 may be shaped like star orwheel, and comprise at least two fins, and the support 62 may extendfrom one side of the fin. Such that the distribution of semiconductorlight emitting elements 1 disposed on the supports 62 may be closer, andthe intensity of light emitting from the illumination device 11 can beimproved as one of advantages of the present invention. The illumination11 according to this embodiment may further comprise a candle likehousing 7 entirely covering the semiconductor light emitting elements 1,supports 62, and the supporting base 5. For example according to theembodiment, when the number of the semiconductor light emitting elements1 is equal to three, and the height of the housing 7 is equal to orclose to 51.39 mm and the inter-diameter of the bottom of the housing 7is equal to or close to 34.92 mm, the distance between the support 62and the symmetrical center 5 a of the supporting base 5 may range from 2mm to 3 mm, and the length of the support 62 may range from 5 mm to 15mm. According to the example described above, a preferable embodiment isdisclosed that the first angle θ1 is preferably equal to or close to 80degrees and the length of the support 62 is preferably equal to or closeto 13.6 mm. As shown in the illumination map in FIG. 37, the light ofthe illumination device 11 according to this preferable embodiment maybe more uniform than the prior embodiment shown in FIG. 33 and FIG. 34.The light beam emitted from each semiconductor light emitting element 1according to the embodiment can compensate shadow, and the light beamcan be averagely distributed over whole area of the housing 7 withoutdark zone. There is another preferable embodiment which can reach thesimilar lighting effect as described above, that the first angle θ1 ispreferably equal to or close to 80 degrees, the length of the support 62is preferably equal to or close to 15 mm and the distance between thesupport 62 and the symmetrical center 5 a of the supporting base 5 ispreferably equal to or close to 2 mm.

In one of the embodiments of the present invention, a illuminationdevice 11 may comprise at least two of semiconductor light emittingelements 1 arranged on the supporting base 5, wherein the major lightemitting surface of at least one of the semiconductor light emittingelements 1 may not face the symmetrical center of the supporting base 5.At least one of the semiconductor light emitting elements 1 of theillumination device 11 may further comprise at least a major lightemitting surface facing the symmetrical center of the supporting base 5.So that the light beam emitted from the different semiconductor lightemitting elements 1 can be projected onto and through the surroundinglamp housing 7, and compensate the shadow of light emitting from theillumination device 11 according to the present invention. However, theat least two semiconductor light emitting elements 1 further can bearranged parallel or nonparallel to each other alternatively accordingto different application.

In addition to the embodiments described above, there are still otherapproaches to uniform the light emitting from a illumination device 11according to the present invention. Please refer to FIG. 38 to FIG. 40.FIGS. 38-39 respectively are partial schematic diagrams of differentkinds of illumination device 11 according to the embodiments of thepresent invention. FIG. 40 is an illumination map of the illuminationdevice 11 according to one of preferable embodiments detailed below.Illumination device 11 shown in FIG. 25, FIG. 38 or FIG. 39 may comprisea supporting base 5 having a first group of support 62 and a secondgroup of support 62, semiconductor light emitting elements 1 having afirst group of semiconductor light emitting element 1 a and a secondgroup of semiconductor light emitting element 1 b respectively disposedon the first group and the second group of the supports 62correspondingly, wherein the first group of support 62 and the secondgroup of support 62 may be alternatively arranged on the supporting base5. The quantity of the first group of support 62 may be the same with ordifferent from the quantity of the second group of support 62. Thesupporting base 5 may have a symmetrical center. In one embodiment foruniform the light emitting from a illumination device 11 according tothe present invention as shown in FIG. 25 or FIG. 38, the first angle θ1existing between the first group of the light emitting element 1 a andthe supporting base 5 may be different from the first angle θ1 existingbetween the second group of the light emitting element 1 b and thesupporting base 5. In another embodiment for uniform the light emittingfrom a illumination device 11 according to the present invention, thelength of the first group and the second group of the support 62 may bedifferent, for example the first group of the support 62 is taller thanthe second group of the support 62 as shown in FIG. 38 or FIG. 39, suchthat the height of the first group of the light emitting element 1 a maybe different from the height of the second group of the light emittingelement 1 b. In another embodiment for uniform the light emitting from aillumination device 11 according to the present invention, the distancebetween the first group of the support 62 and the symmetrical center maybe different from the distance between the second group of the support62 and the symmetrical center, for example the distance between thefirst group of the support 62 and the symmetrical center may be longerthan the distance between the second group of the support 62 and thesymmetrical center as shown in FIG. 39.

For example according to one of preferable embodiments as shown in FIG.38, when the number of the first group and the second group ofsemiconductor light emitting elements 1 is the same and equal to four,the diameter of the supporting base 5 may range from 21 mm to 25 mm, thefirst angle θ1 existed between the first group of the semiconductorlight emitting element 1 and the supporting base 5 may range from 30degrees to 150 degrees, the first angle θ1 existed between the secondgroup of the semiconductor light emitting element 1 and the supportingbase 5 may range from 30 degrees to 150 degrees, the length of the firstgroup of the support 62 may range from 10 to 20 mm, and the second groupof the support 62 may range from 12 to 17 mm. According to the exampledescribed above, a preferable embodiment is disclosed that the diameterof the supporting base 5 is preferably equal to or close to 21 mm, thefirst angle θ1 existed between the first group of the semiconductorlight emitting element 1 and the supporting base 5 is preferably thesame with the first angle θ1 existed between the second group of thesemiconductor light emitting element 1 and the supporting base 5 andequal to or close to 80 degrees, the length of the first group of thesupport 62 is preferably equal to or close to 15 mm and the length ofthe second group of the support 62 is preferably equal to or close to 12mm.

According to one of preferable embodiments, the illumination device 11may further comprise a ball like housing 7 as shown in FIG. 39. Thesupporting base 5 of the illumination device 11 may further comprise acenter portion and an extension portion extended from the centerportion, wherein the different group of the supports 62 may respectivelyextend from one side of the center portion and the extension portion.For example according to another one of preferable embodiments as shownin FIG. 39, when the number of the first group and the second group ofsemiconductor light emitting elements 1 is the same and equal to four,and the outer-diameter of the housing 7 is equal to or close to 60 mmand the inter-diameter of the bottom of the housing 7 is equal to orclose to 32 mm, the first angle θ1 existed between the first group ofthe semiconductor light emitting element 1 and the supporting base 5 mayrange from 30 degrees to 150 degrees, the first angle θ1 existed betweenthe second group of the semiconductor light emitting element 1 and thesupporting base 5 may range from 30 degrees to 150 degrees, the distancebetween the first group of the support 62 and the symmetrical center ofthe supporting base 5 may range from 10 mm to 13.5 mm, the distancebetween the second group of the support 62 and the symmetrical center ofthe supporting base 5 may range from 2 mm to 13.5 mm, the length of thefirst group of the support 62 may range from 5 mm to 16 mm, and thelength of the second group of the support 62 may range from 5 mm to 20mm. According to the example described above, a preferable embodiment isdisclosed that the first angle θ1 existed between the first group of thesemiconductor light emitting element 1 and the supporting base 5 ispreferably equal to or close to 80 degrees, the first angle θ1 existedbetween the second group of the semiconductor light emitting element 1and the supporting base 5 is preferably equal to or close to 60 degrees,the length of the first group of the support 62 is preferably equal toor close to 15.8 mm, the length of the second group of the support 62 ispreferably equal to or close to 5.8 mm, the distance between the firstgroup of the support 62 and the symmetrical center of the supportingbase 5 is preferably equal to or close to 12 mm, and the distancebetween the second group of the support 62 and the symmetrical center ofthe supporting base 5 is preferably equal to or close to 5 mm. Theillumination map of the illumination device 11 according to thispreferable embodiment is shown in FIG. 40, wherein the shadow oflighting effect is decreased and the light emitting from theillumination device 11 can be more uniform.

Furthermore, the card shaped, stick shaped or popsicle shapedsemiconductor light emitting elements 1 may be arranged on thesupporting base 5 to form like V-shape, U-shape, triangle-shape andpolygon-shape from top view of the illumination device 11, all of aboveembodiments belong to scope of the present invention. The presentinvention can be applied in light bulbs, light tubes and advertisementboards, and the LED chip of the present invention is economical and haspractical value because of the great light emitting effect, the lowpower consumption and the uniform emitted light.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. An illumination device, comprising: a supportingbase having a symmetrical center; and a plurality of semiconductor lightemitting elements disposed on the supporting base and around thesymmetrical center; wherein at least one of the semiconductor lightemitting elements comprising: a transparent substrate, having a supportsurface and a second main surface disposed opposite to each other; and alight emitting diode (LED) structure disposed on the support surface andform a first main surface where light emitted from with at least a partof the support surface without the LED structure, and at least a part oflight emitted from the LED structure may pass through the transparentsubstrate and emerge from the second main surface.
 2. The illuminationdevice of claim 1, wherein a first angle exists between at least one ofthe semiconductor light emitting elements and the supporting base, andthe first angle may range from 30 to 150 degrees.
 3. The illuminationdevice of claim 1, wherein a first angle exists between at least one ofthe semiconductor light emitting elements and the supporting base, andthe first angle may range from 60 to 90 degrees.
 4. The illuminationdevice of claim 1, wherein a first angle exists between at least one ofthe semiconductor light emitting elements and the supporting base, andthe first angle may be equal or close to 60 degrees.
 5. The illuminationdevice of claim 1, wherein a first angle exists between at least one ofthe semiconductor light emitting elements and the supporting base, andthe first angle may be equal or close to 80 degrees.
 6. The illuminationdevice of claim 1, wherein at least two of the semiconductor lightemitting elements may be arranged not parallel to each other.
 7. Theillumination device of claim 1, wherein at least two of thesemiconductor light emitting elements may be arranged parallel to eachother.
 8. The illumination device of claim 1, wherein the major lightemitting surface of at least one of the semiconductor light emittingelements may not face the symmetrical center.
 9. The illumination deviceof claim 1, wherein the semiconductor light emitting elements compriseat least a first group and a second group of the light emittingelements, wherein distance between the first group of the light emittingelement and the symmetrical center may be different from it between thesecond group of the light emitting element and the symmetrical center.10. The illumination device of claim 9, wherein distance between thefirst group of the light emitting element and the symmetrical center mayrange from 10 to 13.5 mm.
 11. The illumination device of claim 9,wherein distance between the second group of the light emitting elementand the symmetrical center may range from 2 to 13.5 mm.
 12. Theillumination device of claim 1, wherein the semiconductor light emittingelements comprise at least a first group and a second group of the lightemitting elements; and height of the first group of the light emittingelement may be different from it of the second group of the lightemitting element.
 13. The illumination device of claim 1, furthercomprising a plurality of supports disposed between at least a part ofthe semiconductor light emitting elements and the supporting base. 14.The illumination device of claim 13, wherein length of the supports mayrange from 5 to 20 mm.
 15. The illumination device of claim 1, whereinthe semiconductor light emitting elements comprise at least a firstgroup and a second group of the light emitting elements; and a firstangle existing between the first group of the light emitting element andthe supporting base may be different from it between the second group ofthe light emitting element and the supporting base.
 16. The illuminationdevice of claim 9, wherein the first group and the second group of thelight emitting elements are alternatively arranged on the supportingbase.
 17. The illumination device of claim 12, wherein the first groupand the second group of the light emitting elements are alternativelyarranged on the supporting base.
 18. The illumination device of claim15, wherein the first group and the second group of the light emittingelements are alternatively arranged on the supporting base.
 19. Theillumination device of claim 1, wherein the supporting base may beshaped like star or wheel.
 20. The illumination device of claim 1,wherein the supporting base may comprise at least two fins, wherein atleast one of the semiconductor light emitting elements may be disposedon the fins.
 21. The illumination device of claim 1, wherein thesupporting base may comprise a center portion and an extension portionextended from the center portion, wherein at least two of thesemiconductor light emitting elements may be respectively disposed onthe center portion and the extension portion.